This study investigates the influence of post-deposition thermal annealing temperature on the crystal structure, chemical composition, and electrical performance of solutionprocessed indium oxide (In2O3) thin films. Based on thermogravimetric analysis (TGA) of the precursor solution, annealing temperatures of 350, 450, and 550 ◦C were adopted. The resulting In2O3 films were characterized using ultraviolet–visible (UV–Vis) spectroscopy, atomic force microscopy (AFM), Raman spectroscopy, and Hall-effect measurements to evaluate their optical, morphological, crystalline polymorphism, and electrical properties. The results revealed that the film annealed at 450 ◦C exhibited a field-effect mobility of 4.28 cm2/V·s and an on/off current ratio of 2.15 × 107. The measured hysteresis voltages were 3.11, 1.80, and 0.92 V for annealing temperatures of 350, 450, and 550 ◦C, respectively. Altogether, these findings indicate that an annealing temperature of 450 ◦C provides an optimal balance between the electrical performance and device stability for In2O3- based thin-film transistors (TFTs), making this condition favourable for high-performance oxide electronics.
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